Solvothermal Co-reduction Route to the Nanocrystalline III−V Semiconductor InAs
- 1 August 1997
- journal article
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
- Vol. 119 (33), 7869-7870
- https://doi.org/10.1021/ja9707670
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Organometallic synthesis of gallium-arsenide crystallites, exhibiting quantum confinementJournal of the American Chemical Society, 1990
- Semiconductor crystallites: a class of large moleculesAccounts of Chemical Research, 1990
- Lattice reorganization in electronically excited semiconductor clustersThe Journal of Chemical Physics, 1990
- Electron–vibration coupling in semiconductor clusters studied by resonance Raman spectroscopyThe Journal of Chemical Physics, 1989
- Electronic wave functions in semiconductor clusters: experiment and theoryThe Journal of Physical Chemistry, 1986
- A simple model for the ionization potential, electron affinity, and aqueous redox potentials of small semiconductor crystallitesThe Journal of Chemical Physics, 1983
- Selected area growth of InP by low pressure metalorganic chemical vapor deposition on ion implanted InP substratesApplied Physics Letters, 1983
- Preparation of High-Purity Indium ArsenideJournal of the Electrochemical Society, 1961
- Preparation of Indium ArsenideJournal of Applied Physics, 1959
- Electrical Properties of-Type InAsPhysical Review B, 1956