Experimental results on three-phase polysilicon CCD's with a TCE-SiO/SUB 2//Si/SUB 3/N/SUB 4/ gate insulator
- 1 February 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 11 (1), 229-231
- https://doi.org/10.1109/jssc.1976.1050703
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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