Recent developments in the MOVPE of II–VI compounds
- 24 July 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 72 (1-2), 1-12
- https://doi.org/10.1016/0022-0248(85)90109-5
Abstract
No abstract availableKeywords
This publication has 54 references indexed in Scilit:
- Metalorganic chemical vapour deposition of wide band gap II–VI compoundsJournal of Crystal Growth, 1984
- In situ mass-spectrometric evaluation of impurities in trimethylgalliumJournal of Crystal Growth, 1984
- Routes to ultra-pure alkyls of indium and gallium and their adducts with ethers, phosphines and aminesJournal of Crystal Growth, 1984
- MOVPE of narrow gap II–VI compoundsJournal of Crystal Growth, 1984
- The use of heterocyclic compounds in the organometallic chemical vapour deposition of epitaxial ZnS, ZnSe and ZnOJournal of Crystal Growth, 1984
- Organometallic growth of II–VI compoundsJournal of Crystal Growth, 1981
- Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVDJournal of Electronic Materials, 1981
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978
- A survey of the heteroepitaxial growth of semiconductor films on insulating substratesJournal of Crystal Growth, 1974
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971