High current density Ga+ implantations into Si
- 1 December 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (11), 865-867
- https://doi.org/10.1063/1.90986
Abstract
The lattice disorder produced in Si by a 59‐keV Ga+ ion beam focused to a diameter of 1200 Å and having a current density of 1.2 A/cm2 was compared to that produced by broad area implantations of 59‐keV Ga+ at a current density of 0.4 μA/cm2. Based on 140‐keV proton backscattering, the disorder produced at the high‐dose rate was found to be comparable although deeper than that produced by the low‐dose‐rate implantations. The depth profile of Ga implanted at 1.2 A/cm2 to a dose of 1.5×1015/cm2 was determined by 280‐keV He++ backscattering to be basically consistent with projected range calculations.Keywords
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