The epitaxial growth of silicon in horizontal reactors†
- 1 May 1968
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 24 (5), 405-413
- https://doi.org/10.1080/00207216808938037
Abstract
A theory is proposed for the epitaxial growth of silicon in horizontal reactors operating under conditions which result in a large proportion of the chlorosilane being converted into silicon. The transport equation is solved for the case where the equilibrium reactions are: by assuming that the gas velocity profile is a constant over a plane perpendicular to the direction of gas flow, and that the temperature is everywhere constant in the reaetor. The resulting expression for the growth rate is compared with the experimental values with trichlorosilane as the source of silicon, and it is shown that reasonable agreement obtains.Keywords
This publication has 4 references indexed in Scilit:
- The Kinetics of Epitaxial Silicon Deposition by the Hydrogen Reduction of Chlorosilanes†International Journal of Electronics, 1966
- Vapor Phase Deposition and Etching of SiliconJournal of the Electrochemical Society, 1965
- The Equilibrium Behavior of the Silicon-Hydrogen-Chlorine SystemIBM Journal of Research and Development, 1964
- Epitaxial Silicon Films by the Hydrogen Reduction of SiCl[sub 4]Journal of the Electrochemical Society, 1961