A novel encapsulant material for LEC growth of GaSb
- 1 August 1980
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 49 (4), 670-674
- https://doi.org/10.1016/0022-0248(80)90292-4
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- GaSb and InSb crystals grown by vertical and horizontal travelling heater methodJournal of Crystal Growth, 1979
- Ultimate low-loss single-mode fibre at 1.55 μmElectronics Letters, 1979
- Growth of NaClKCl mixed crystals from the meltMaterials Research Bulletin, 1967
- Facet effect and electrical conductivity in undoped pulled GaSb crystalsSolid-State Electronics, 1964
- Anisotropic Segregation in InSbJournal of the Electrochemical Society, 1961
- Effect of the Polarity of the III-V Intermetallic Compounds on EtchingJournal of Applied Physics, 1960