Dependence of growth rate of quartz in fused silica on pressure and impurity content
- 1 September 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (9), 4718-4728
- https://doi.org/10.1063/1.328346
Abstract
We have measured the effects of pressure, temperature, and some variations in impurity content on the growth rate u of quartz into fused silica. Under all conditions the growth rate was interface controlled and increased exponentially with pressure with an activation volume averaging −21.2 cm3/mole. The activation enthalpy for all specimens extrapolated to a zero pressure value of 64 kcal/mole, within the experimental uncertainty. At a given stoichiometry the effect of hydroxyl content on growth rate is described entirely by a linear term COH in the prefactor of the equation for the growth rate. The effect of chlorine impurity can be described similarly. Also u is increased as the ideal stoichiometry is approached from the partially reduced state.Keywords
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