On the Kinetics of the Thermal Oxidation of Silicon: III . Coupling with Other Key Phenomena

Abstract

A new model of transformation is proposed which leads to a much reduced excess free energy storage. Silicon is transformed to α‐cristobalite plus interstitial Si ions. Subsequent oxidation of these interstitials produces rapid distortion of the lattice and speedy transformation of the structure to vitreous silica. The model allows a satisfactory qualitative explanation of both the orientation and temperature dependence of oxidation‐enhanced diffusion (OED), oxidation‐induced stacking faults (OISF), interface states , fixed oxide charge , oxidation velocity , oxide density interface stoichiometry, and silicon interstitial partition coefficient .