The Schottky-barrier height of Au on n-Ga1−xAlxAs as a function of AlAs content
- 15 April 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (8), 522-524
- https://doi.org/10.1063/1.90850
Abstract
The Schottky‐barrier height of Au on chemically etched n‐Ga1−xAlxAs was measured as a function of x. As x increases, the barrier height rises to a value of about 1.2 eV at x≈0.45, then decreases to about 1.0 eV as x approaches 0.83. The barrier height deviates in a linear way from the value predicted by the ’’common‐anion’’ rule as the AlAs mole fraction increases. This behavior is related to chemical reactivity of the Ga1−xAlxAs surface.Keywords
This publication has 10 references indexed in Scilit:
- New phenomena in Schottky barrier formation on III–V compoundsJournal of Vacuum Science and Technology, 1978
- Room-temperature threshold-current dependence of GaAs-AlxGa1−xAs double-heterostructure lasers on x and active-layer thicknessJournal of Applied Physics, 1978
- Transition in Schottky Barrier Formation with Chemical ReactivityPhysical Review Letters, 1978
- Schottky barriers on compound semiconductors: The role of the anionJournal of Vacuum Science and Technology, 1976
- Liquid-phase epitaxial growth of Ga1−xAlxAs on the side and top surfaces of air-exposed Ga1−yAlyAsApplied Physics Letters, 1976
- Schottky barrier height of n-InxGa1−xAs diodesApplied Physics Letters, 1973
- Surface Barriers on Zinc OxideJournal of Applied Physics, 1970
- Surface State and Interface Effects on the Capacitance-Voltage Relationship in Schottky BarriersJournal of Applied Physics, 1969
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various TemperaturesPhysical Review B, 1931