Influence of the doping concentration on switching processes in psn rectifiers—I: Theory
- 31 December 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (12), 1133-1147
- https://doi.org/10.1016/0038-1101(67)90056-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Influence of the doping concentration on switching processes in psn rectifiers—II: ExperimentSolid-State Electronics, 1967
- Reverse recovery processes in silicon power rectifiersProceedings of the IEEE, 1967
- Switching processes in alloyed pin rectifiersSolid-State Electronics, 1965
- The voltage step at the switching of alloyed pin rectifiersSolid-State Electronics, 1965
- Switching processes in alloyed pin rectifiersSolid-State Electronics, 1965
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942