Enhanced photoconductivity in nitrogen-doped amorphous silicon prepared by d.c. sputtering
- 1 March 1978
- journal article
- other
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 37 (3), 403-407
- https://doi.org/10.1080/01418637808227680
Abstract
Amorphous silicon, prepared by d.c. sputtering in a hydrogen/argon mixture, has been obtained with a low dark conductivity (10−10 Ω1 cm−1) at room temperature and a high photoconductivity. Moreover, a high-level doping has been achieved by the introduction of nitrogen in the plasma during the sputtering process. This doping displaces the Fermi level to within 0.1 eV of the conduction band edge and enhances the photoconductivity by several orders of magnitude.Keywords
This publication has 10 references indexed in Scilit:
- Photoconductivity and recombination in doped amorphous siliconPhilosophical Magazine, 1977
- Preparation of highly photoconductive amorphous silicon by rf sputteringSolid State Communications, 1977
- Hall effect and impurity conduction in substitutionally doped amorphous siliconPhilosophical Magazine, 1977
- Photo and dark conductivity of doped amorphous siliconPhysica Status Solidi (b), 1977
- Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputteringSolid State Communications, 1976
- Effect of hydrogen on amorphous siliconSolid State Communications, 1976
- The temperature dependence f photoconductivity in a-SiJournal of Non-Crystalline Solids, 1974
- Photoconductivity and absorption in amorphous SiJournal of Non-Crystalline Solids, 1973
- Electronic transport and state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972
- The Preparation and Properties of Amorphous SiliconJournal of the Electrochemical Society, 1969