A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT's
- 1 August 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (8), 377-379
- https://doi.org/10.1109/55.31762
Abstract
The authors describe the first frequency divider demonstrated using AlInAs/GaInAs heterojunction bipolar transistors (HBTs). The divider (a static 1/4 divider circuit) operates up to a maximum frequency of 17.1 GHz, corresponding to a gate delay of 29 ps for a bilevel current-mode logic (CML) gate with a fan-out of 2, and a total power consumption of 67 mW (about 4.5 mW per equivalent NOR gate). These results demonstrate the potential of AlInAs/GaInAs HBTs for implementing low-power, high-speed integrated circuits.Keywords
This publication has 6 references indexed in Scilit:
- High-speed (ft = 78 GHz) AlInAs/GaInAs single heterojunction HBTElectronics Letters, 1989
- Ultra-high-speed digital circuit performance in 0.2- mu m gate-length AlInAs/GaInAs HEMT technologyIEEE Electron Device Letters, 1988
- A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structureIEEE Transactions on Electron Devices, 1988
- A 20-GHz frequency divider implemented with heterojunction bipolar transistorsIEEE Electron Device Letters, 1987
- AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performanceElectronics Letters, 1986
- GaAsGaAlAs heterojunction transistor for high frequency operationSolid-State Electronics, 1972