HgCdTe electron avalanche photodiodes
- 1 June 2004
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 33 (6), 630-639
- https://doi.org/10.1007/s11664-004-0058-1
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- MWIR HgCdTe avalanche photodiodesPublished by SPIE-Intl Soc Optical Eng ,2001
- A possible resolution of the valence-band offset controversy in HgTe/CdTe superlatticesJournal of Vacuum Science & Technology A, 1989
- Generalized Brooks’ formula and the electron mobility in SixGe1−x alloysApplied Physics Letters, 1985
- Electrical Properties of-Type CdTePhysical Review B, 1963
- One-dimensional overlap functions and their application to Auger recombination in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1960
- On the Electrical and Optical Properties of p-type Cadmium Telluride CrystalsJournal of the Physics Society Japan, 1960
- Auger effect in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959
- The influence of interelectronic collisions on conduction and breakdown in polar crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1958
- Theory of the Electrical Properties of Germanium and SiliconPublished by Elsevier ,1955
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1950