Investigation of Frenkel defects in electron irradiated copper by Huang scattering of X-rays. II. Thermal annealing

Abstract

For pt. I see ibid., vol.4, no.10, 1575 (1974). After low temperature electron irradiation of copper single crystals the thermal recovery behaviour has been investigated by measurements of the diffuse scattering of X-rays close to the Bragg reflections and by measurements of the electrical resistivity change. At the end of recovery stage I an increase of the scattering intensity per interstitial was observed. This gives direct evidence that the interstitials agglomerate during their free migration. In recovery stage II a further increase of the scattering intensity per interstitial suggests an increase of the average interstitial cluster size throughout this stage. The mean number of interstitials per cluster can be estimated. These results can be compared with observations in the electron microscope.