The bipolar inversion channel field-effect transistor (BICFET)—A new field-effect solid-state device: Theory and structures
- 1 November 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (11), 2345-2367
- https://doi.org/10.1109/T-ED.1985.22281