Palladium silicide formation observed by Auger electron spectroscopy
- 1 August 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (3), 158-160
- https://doi.org/10.1063/1.1655421
Abstract
The growth kinetics and composition of thin films of Pd2Si on single‐crystal Si was observed by combining Auger electron spectroscopy with the in situ sputter etching. The characteristic Auger spectrum for Pd2Si was measured and separately identified by x‐ray diffraction analysis. In‐depth composition profiles indicated that a Si‐rich region exists near the silicide/silicon interface during the diffusion‐limited Pd2Si formation.Keywords
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