An integrated silicon magnetic field sensor using the magnetodiode principle

1 March 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 31 (3), 286-291
https://doi.org/10.1109/t-ed.1984.21516

Abstract

We report a novel integrated magnetic field sensitive device. Its structure is reminiscent of the bipolar transistor, but its operation is essentially that of a magnetodiode: a reverse-biased p-n (collector) junction plays a role similar to that of the high recombining surface of classical magnetodiodes. The device can be manufactured in standard bulk CMOS or bipolar technology. Sensitivity up to 25 V/T at 10-mA current is achieved. Voltage-current characteristics shows saturation and negative resistance regions, which are explained by JFET and UJT effects, respectively.

Keywords

MAGNETIC FIELDS
VOLTAGE
SURFACE RESISTANCE
BIPOLAR TRANSISTORS
SILICON
SATURATION MAGNETIZATION
MANUFACTURING
CMOS TECHNOLOGY

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