Low-Temperature Photomagnetoelectric Properties of Gold-Dopedn-Type Silicon

Abstract

The photomagnetoelectric (PME) effect was observed between 21 and 84°K in silicon doped with gold and phosphorus. A generalized diffusion equation is formulated and solved with the impurity centers included in the charge-balance equation and arbitrary intensity of steady illumination. When the carrier densities are much smaller than the gold density, the charged impurities maintain charge neutrality, and this results in a range of injection where $\Delta p={\Gamma }_1\times \Delta n+{\Gamma }_2\Delta n^2$. If the quadratic term dominates, the PME current is proportional to the $\frac{4}{3}$ power of the photoconductance. This power law is observed in our measurements, from which we deduce values for the product $\gamma _{\frac{1}{2}}^{}{}_{}{}^{\frac{1}{2}}{\tau }_n$ between 36 nsec and 63 μsec.