Exchange splitting of direct excitons
- 6 February 1975
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 8 (4), L52-L55
- https://doi.org/10.1088/0022-3719/8/4/004
Abstract
The observed splitting of the direct exciton lines in cubic semiconductors is due to the short range, not the long range, electron-hole exchange interaction in the exciton. The value of the exchange integral can be deduced from the measurements of the splitting, if the dielectric constant and the exciton reduced mass are known.Keywords
This publication has 15 references indexed in Scilit:
- Exchange energies for direct excitonsJournal of Physics C: Solid State Physics, 1973
- Magneto-optical Investigation of the Free-Exciton Reflectance from High-Purity Epitaxial GaAsPhysical Review B, 1973
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971
- Spin Exchange in Excitons, the Quasicubic Model and Deformation Potentials in II-VI CompoundsPhysical Review B, 1970
- Uniaxial-strain effects on n = 1 free-exciton and free-carrier lines in GaAsJournal of Luminescence, 1970
- Free-Carrier and Exciton Recombination Radiation in GaAsPhysical Review B, 1968
- Electron-Hole Exchange Energy in Shallow ExcitonsJournal of the Physics Society Japan, 1964
- Collective Excited States and Dielectric Constant in InsulatorsJournal of the Physics Society Japan, 1962
- Symmetry of Excitons inOPhysical Review B, 1961
- Exciton and Plasmon in Insulating CrystalsProgress of Theoretical Physics, 1959