Titanium-doped semi-insulating InP grown by the liquid encapsulated Czochralski method
- 16 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (24), 1656-1657
- https://doi.org/10.1063/1.96845
Abstract
Semi-insulating crystals of InP with resistivities of 1–3×106 Ω cm have been grown by the liquid encapsulated Czochralski method from melts co-doped with Ti, a deep donor located 0.62±0.02 eV below the conduction band, and either Zn, Cd, or Be. This technique should make it possible to obtain crystals with resistivities of 107–108 Ω cm, which would be of interest for integrated circuit applications if their thermal stability were found to exceed that of Fe-doped semi-insulating InP.Keywords
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