An MOS field-effect transistor fabricated on a molecular-beam epitaxial silicon layer
- 1 June 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (11), 740-741
- https://doi.org/10.1063/1.90655
Abstract
An MOS field‐effect transistor which has a buried channel structure and operates in the depletion mode is first fabricated on a molecular‐beam epitaxial silicon layer. The field‐effect mobility of this MOSFET is comparable to those of the MOSFET’s fabricated on conventional single crystals of silicon.Keywords
This publication has 2 references indexed in Scilit:
- Molecular beam and solid-phase epitaxies of silicon under ultra-high vacuumJournal of Crystal Growth, 1978
- Transport properties of conduction electrons in n-type inversion layers in (100) surfaces of siliconJournal of Physics and Chemistry of Solids, 1974