Molecular beam and solid-phase epitaxies of silicon under ultra-high vacuum
- 1 December 1978
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 45, 287-291
- https://doi.org/10.1016/0022-0248(78)90451-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- EPITAXIAL GROWTH OF Si ON Si IN ULTRA HIGH VACUUMApplied Physics Letters, 1964