GaAs Substrate Preparation for Oval-Defect Elimination during MBE Growth
- 1 February 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (2A), L137
- https://doi.org/10.1143/jjap.25.l137
Abstract
We have developed a new method for GaAs substrate preparation which significantly reduces the formation of oval defects during MBE growth of selectively doped n-Al x Ga1-x As/GaAs heterostructures. The method simply requires treatment in H2SO4 after mechano-chemical polishing in NaOCl solution and generation of a protective surface oxide during In soldering. Routinely a density of oval defects of less than 200 cm-2 is achieved for 2 µm thick heterostructures. The efficiency of the new preparation procedure is demonstrated by 2DEG mobilities in excess of 106 cm2/(Vs) at 6 K obtained with a spacer width as narrow as 18 nm.Keywords
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