Electron Spin Resonance in Phosphorus Doped Silicon at Low Temperatures
- 1 August 1965
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 20 (8), 1447-1457
- https://doi.org/10.1143/jpsj.20.1447
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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- Electron Spin Relaxation Time of Heavily P31 Doped SiliconJournal of the Physics Society Japan, 1964
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- Magnetic Properties of-Type SiliconPhysical Review B, 1958
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- Spin Resonance of Impurity Atoms in SiliconPhysical Review B, 1955