Integrated silicon microbeam PI-FET accelerometer
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (1), 27-33
- https://doi.org/10.1109/t-ed.1982.20654
Abstract
Integrated accelerometers showing excellent linearity have been designed and fabricated using silicon planar technology, zinc-oxide sputtering, and anisotropic etching. Small cantilevered beam structures overcoated with piezoelectric ZnO films act as force transducers, and the electrical signal is directly coupled to the gate of a depletion-mode, p-channel MOS transistor. The accelerometers have a nearly flat response from very low frequencies until beam resonances become significant (above 40 kHz). The near-dc response results from completely isolating the piezoelectric film from electrical leakage paths. Measured performance has matched very well with theory. Theoretical analysis has been used to derive useful design tradeoffs.Keywords
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