The role of radiation damage on the current-voltage characteristics of p-n junctions
- 1 July 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (7), 689-698
- https://doi.org/10.1016/0038-1101(74)90092-6
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Impurity centers in PN junctions determined from shifts in the thermally stimulated current and capacitance response with heating rateSolid-State Electronics, 1972
- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972
- RESIDUAL ELECTRICALLY ACTIVE DEFECTS AFTER LATTICE REORDERING IN ION-IMPLANTED SILICONApplied Physics Letters, 1971
- The Harwell 500 kV Cockcroft-Walton accelerator and its use as a general research facilityNuclear Instruments and Methods, 1971
- The electrical behaviour of abrupt ion implanted and diffused P+N junctionsRadiation Effects, 1971
- Lifetime effects in ion implanted siliconRadiation Effects, 1970
- Determination of deep centers in silicon by thermally stimulated conductivity measurementsSolid-State Electronics, 1969
- A Technique for Trap Determinations in Low-Resistivity SemiconductorsJournal of Applied Physics, 1968
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949