Suppression of drain-current overshoot in SOI-MOSFETs using an ultrathin SOI substrate

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Abstract
An n-channel SOI-MOSFET fabricated on a very thin (500 Å) SOI substrate exhibited no detectable drain-current overshoot for various gate turn-on pulses. The reason can be ascribed to the suppression of the floating substrate effect, brought about by the quick decay of excess holes.