Helium migration in palladium II. scanning electron microscopy examination of high concentration samples
- 1 March 1971
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 8 (1-2), 27-30
- https://doi.org/10.1080/00337577108231004
Abstract
Scanning electron microscopy has been used to examine bulk phenomena of palladium samples annealed at 1200°C after implantation to a dose of 1017 He atoms/cm2 at 5 MeV. A 3μ deep porous layer was found at a depth of 10.9μ±0.3μ. Wide grain boundaries (microcracks) extended from this layer to the top surface of the sample.Keywords
This publication has 1 reference indexed in Scilit:
- Helium migration in palladium I. Concentration dependence of helium releaseRadiation Effects, 1971