An investigation of the silicon—Sapphire interface using the MIS capacitance method
- 1 February 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 22 (2), 63-65
- https://doi.org/10.1109/t-ed.1975.18078
Abstract
Measurements of the MIS capacitance as a function of voltage were carried out on aluminum-sapphire-silicon structures. The results were used to determine the doping of the silicon and the interface-state density and flat-band charge density at the silicon-sapphire interface. The density of states function Ds(cm-2eV-1) is found to be qualitatively similar to that reported for the Si-SiO2interface but is larger in magnitude by a factor of 5-10.Keywords
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