Stochastic electron heating in a capacitive RF discharge with non-Maxwellian and time-varying distributions
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Plasma Science
- Vol. 23 (1), 89-96
- https://doi.org/10.1109/27.376565
Abstract
In capacitively coupled radio frequency discharges, the electrons gain and lose energy by reflection from oscillating, high voltage sheaths. When time-averaged, this results in stochastic heating, which at low pressure is responsible for most of the electron heating in these discharges. Previous derivations of stochastic heating rates have generally assumed that the electron distribution is a time-invariant, single-temperature Maxwellian, and that the sheath motion is slow compared to the average electron velocity, so that electrons gain or lose a small amount of energy in each sheath reflection. Here we solve for the stochastic heating rates in the opposite limit of fast sheath motion and consider the applicability of the slow and fast sheath equations in the intermediate region. We also consider the effect of a two-temperature Maxwellian distribution on particle balance and the effect of a time-varying temperature on the heating rates and densities.Keywords
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