Room-temperature c.w. operation of InP/InGaAsP/InP double heterostructure diode lasers emitting at 1.55 μm

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Abstract
Room-temperature c.w. operation has been achieved for stripe-geometry double heterostructure InP/InGaAsP/InP diode lasers emitting at 1.55 μm. The heterostructures were grown by l.p.e. on (100) InP substrates, and stripes were defined by the conventional planar-stripe structure. The room-temperature (20°C) c.w. threshold current ≃250 mA for a 6 μm wide by 200 μm long cavity.