Evidence of chemical-potential shift with hole doping in
- 1 December 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (21), 12098-12101
- https://doi.org/10.1103/physrevb.44.12098
Abstract
We have performed photoemission studies on high-quality samples with various δ. Our results show a clear chemical-potential shift (0.15–0.2 eV) as a function of doping. This result and the existing angle-resolved-photoemission data give a rather standard doping behavior of this compound in its highly doped regime.
Keywords
This publication has 16 references indexed in Scilit:
- Growth and properties of oxygen- and ion-doped single crystalsPhysical Review B, 1990
- Properties that change as superconductivity disappears at high-doping concentrations inPhysical Review B, 1989
- Impurity-state-like nature of Fermi-liquid states in Bi2Sr2CaCu2O8 observed by photoemission and x-ray absorptionPhysica C: Superconductivity and its Applications, 1989
- Large, dispersive photoelectron Fermi edge and the electronic structure of single crystals measured at 20 KPhysical Review B, 1989
- Reflectivity and conductivity ofPhysical Review B, 1989
- Valence fluctuations with finite U: A mechanism for high-temperature superconductivitySolid State Communications, 1989
- Calculated effective Hamiltonian forCuand solution in the impurity Anderson approximationPhysical Review B, 1988
- : Electrodynamics of Crystals with High ReflectivityPhysical Review Letters, 1988
- Anomalous Disappearance of High- Superconductivity at High Hole Concentration in MetallicPhysical Review Letters, 1988
- Evidence for holes on oxygen sites in the high- superconductors andPhysical Review B, 1988