Multiwavelength, densely-packed 2 x 2 vertical-cavity surface-emitting laser array fabricated using selective oxidation

Abstract

Data are presented characterizing an individually addressable, multiwavelength 2/spl times/2 vertical-cavity surface-emitting laser array. The individual elements are fabricated on center-to-center spacings of 12 /spl mu/m with the lasing wavelengths controlled through the selectively oxidized lateral device sizes. Devices sized 3.5, 3.0, 2.5, and 2.0 /spl mu/m result in lasing wavelengths of 9608, 9598, 9587, and 9574 /spl Aring/, respectively. Continuous wave threshold currents of the four elements with decreasing device sizes are 240, 214, 187, and 169 /spl mu/A, respectively.