High-performance nonvolatile HfO/sub 2/ nanocrystal memory
- 28 February 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 26 (3), 154-156
- https://doi.org/10.1109/led.2004.842727
Abstract
We demonstrate high-performance nonvolatile HfO 2 nanocrystal memory utilizing spinodal phase separation of Hf-silicate thin film by 900/spl deg/C rapid thermal annealing. With this technique, a remarkably high nanocrystal density of as high as 0.9 /spl sim/ 1.9 × 10/sup 12/ cm/sup -2/ with an average size 2 nanocrystals are well embedded inside an SiO 2 -rich matrix and due to their sufficiently deep energy level, we, for the first time, have demonstrated superior characteristics of the nanocrystal memories in terms of a considerably large memory window, high-speed program/erase (P/E) (1 μs/0.1 ms), long retention time greater than 10/sup 8/ s for 10% charge loss, and excellent endurance after 10 6 P/E cycles.Keywords
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