P-N Junction Formation during Molecular-Beam Epitaxy of Ge-Doped GaAs
- 1 October 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (11), 4422-4425
- https://doi.org/10.1063/1.1659789
Abstract
Germanium was used to dope both the n and p layers of GaAs grown when molecular beams containing Ge, Ga, and As2 simultaneously impinged on the substrate surface. The formation of n‐ or p‐type layers is dependent on the ratio of As2/Ga in the molecular beam and the substrate temperature. We describe the process used for the doping as well as the photoluminescence spectra from these layers.Keywords
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