Raman-scattering study of ion-implantation-produced damage inCu2O

Abstract

We present a Raman-scattering study of damage in ${\mathrm{Cu}}_2$O which we have implanted with 90- and 180-keV Cd ions with doses ranging from 1.5 ${\times 10}^{11}$ to 1.5×${10}^{15}$ ${\mathrm{cm}}^{-2\mathrm{}}$. The Raman scattering was performed prior to annealing in order to study primarily the implantation-produced lattice damage. Using two argon-laser lines close to resonance with the $1S$ blue exciton, we observe changes from the pure-crystal Raman spectrum at all implantation doses. The unusual sensitivity of the technique can be interpreted in terms of damage-induced broadening of the intrinsic exciton states.