TYPE CONVERSION AND p-n JUNCTIONS IN n-CdTe PRODUCED BY ION IMPLANTATION
- 1 May 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 12 (9), 303-305
- https://doi.org/10.1063/1.1652002
Abstract
Type conversion and p‐n junctions have been produced by the implantation of 400‐keV As+ ions into n‐CdTe. In forward bias, the junctions emit bandgap infrared radiation at room temperature.Keywords
This publication has 6 references indexed in Scilit:
- Zn and Te Implantations into GaAsJournal of Applied Physics, 1967
- Implantation of zinc into gallium arsenideProceedings of the IEEE, 1967
- Some plasma-physical aspects of mono- and duo-plasmatron ion sourcesNuclear Instruments and Methods, 1965
- Self-Compensation-Limited Conductivity in Binary Semiconductors. III. Expected Correlations With Fundamental ParametersPhysical Review B, 1964
- Self-Compensation-Limited Conductivity in Binary Semiconductors. II.-ZnTePhysical Review B, 1964
- Self-Compensation Limited Conductivity in Binary Semiconductors. I. TheoryPhysical Review B, 1964