High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates
- 18 January 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (3), 209-211
- https://doi.org/10.1063/1.99521
Abstract
High‐quality bulk InP and double heterostructure InP/GaInAsP/InP have been grown on silicon substrates by a low‐pressure metalorganic chemical vapor deposition growth technique. X‐ray diffraction patterns, as well as structural characterizations, indicate that the layers have very good crystalline quality. An intense photoluminescence signal from the quaternary alloy GaxIn1−xAsyP1−y has been recorded at room temperature, at the expected value of 1.3 μm.Keywords
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