Arsenic Implanted and Implanted-Diffused Profiles in Silicon Using Secondary Ion Emission and Differential Resistance
- 1 January 1973
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- In-depth profiles of phosphorus ion-implanted silicon by Auger spectroscopy and secondary ion emissionSurface Science, 1972
- The application of the ion microprobe analyser to the measurement of the distribution of boron ions implanted into silicon crystalsJournal of Physics D: Applied Physics, 1972
- Analyses de couches minces de silice par emission ionique secondaireMaterials Research Bulletin, 1971
- Non-Gaussian Implantation ProfilesPublished by Springer Nature ,1971
- RANGES OF Na, K, Kr, AND Xe IONS IN AMORPHOUS Al2O3 IN THE ENERGY REGION 40–1 000 KEVCanadian Journal of Physics, 1967
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961