c-Axis-Oriented Pb(Zr, Ti)O3 Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method

Abstract

Tetragonal perovskite Pb(Zr _x Ti_{1- x} )O₃ (PZT) film with single c-axis orientation was successfully fabricated on a single-crystalline MgO(100) substrate at a surface temperature as low as 480°C using a “digital metalorganic chemical vapor deposition (digital MOCVD)” method. In this method, each metalorganic source was supplied alternately into the MOCVD reactor to prevent the formation of unexpected phases such as pyrochlore due to gas phase reaction at the low processing temperature. For layer-by-layer growth in the MOCVD method, the introduction sequence and amount of metalorganic sources supplied were adjusted to correspond to the crystal structure and density of the fabricated film. This is the first report on the fabrication of tetragonal perovskite PZT film with single c-axis orientation using the “digital MOCVD” method.