Numerical computation of chemisorption isotherms for device modeling of semiconductor gas sensors
- 1 August 2003
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 93 (1-3), 362-369
- https://doi.org/10.1016/s0925-4005(03)00212-0
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Conduction Model of Metal Oxide Gas SensorsJournal of Electroceramics, 2001
- The Various Types of AdsorptionPublished by Springer Nature ,1991
- Adsorption and DesorptionPublished by Springer Nature ,1990
- A diffusion-reaction model of electrical conduction in tin oxide gas sensorsSemiconductor Science and Technology, 1989
- Electrical studies on the reactions of CO with different oxygen species on SnO2 surfacesSurface Science, 1987
- The Electron Theory of Chemisorption and Catalysis on Ideal Semiconductor SurfacesPublished by Springer Nature ,1987
- Chemisorption and charge transfer at ionic semiconductor surfaces: Implications in designing gas sensorsProgress in Surface Science, 1985
- Characteristics of semiconductor gas sensors I. Steady state gas responseSensors and Actuators, 1982
- Chemisorption on semiconductor surfaces: Generalized expression of partial charge injection and adsorption energySurface Science, 1981
- Oxygen chemisorption on tin oxide: Correlation between electrical conductivity and EPR measurementsJournal of Vacuum Science and Technology, 1980