Polycrystalline silicon-on-metal strain gauge transducers
- 1 July 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (7), 796-801
- https://doi.org/10.1109/t-ed.1983.21212
Abstract
The characteristics of polycrystalline silicon-on-metal strain gauge transducers are reported. This strain gauge material is stable, rugged, operates over a wide temperature range, and has a gauge factor intermediate between that of single-crystal Si, having the same carrier concentration, and that of metal wires and thin films. A model relating the polycrystalline silicon gauge factor and its temperature dependence to that of single-crystal Si strain gauges is developed and shown to adequately describe transducer properties.Keywords
This publication has 5 references indexed in Scilit:
- Piezoresistive properties of polycrystalline siliconJournal of Applied Physics, 1976
- Monolithic polycrystalline-silicon pressure transducerElectronics Letters, 1974
- Piezoresistive coefficients in silicon diffused layersPhysica Status Solidi (a), 1973
- Piezoresistive Strain Gages and Transducer ElementsIEEE Transactions on Instrumentation and Measurement, 1963
- Use of Piezoresistive Materials in the Measurement of Displacement, Force, and TorqueThe Journal of the Acoustical Society of America, 1957