A Monolithic Single-Chip X-Band Four-Bit Phase Shifter

1 December 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques

Vol. 30 (12), 2201-2206
https://doi.org/10.1109/tmtt.1982.1131408

Abstract

X-band GaAs monolithic passive phase shifter with 22.5°, 45°, 90°, and 180° phase bits are developed using FET switches. By cascading all four bits, a four-bit digital phase shifter with 5.1+-0.6-dB insertion loss is realized on a single 6.4 x 7.9 x 0.1-mm chip.

Keywords

PHASE SHIFTERS
SWITCHES
SWITCHING CIRCUITS
IMPEDANCE
GALLIUM ARSENIDE
MICROWAVE FETS
EQUIVALENT CIRCUITS
CAPACITANCE
RADIO FREQUENCY
P-I-N DIODES

This publication has 2 references indexed in Scilit:

Microwave GaAs FET Switching
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
Microwave switching with parallel-resonated GaAs FETS
IEEE Electron Device Letters, 1980

Cited by 16 articles