A solution growth technique has been developed for the deposition of thin films of bismuth sulfide on glass substrate at room temperature (25°C) using Bi+3‐salt solution, triethanolamine (TEA), ammonia, and thioacetamide as reacting agents. The material has been characterized by chemical analysis, x‐ray studies, and optical and electrical measurements. The amorphous films behave as p‐type semiconductors with a bandgap of 1.7 eV.