Localized state distribution in amorphous-silicon-based alloys using the field effect technique
- 30 November 1980
- journal article
- Published by Elsevier in Solar Cells
- Vol. 2 (3), 277-288
- https://doi.org/10.1016/0379-6787(80)90032-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Electrical and optical properties of amorphous Si:F:H alloysPhilosophical Magazine Part B, 1979
- A new amorphous silicon-based alloy for electronic applicationsNature, 1978
- Doped amorphous semiconductorsAdvances in Physics, 1977
- Solar cells using discharge-produced amorphous siliconJournal of Electronic Materials, 1977
- Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputteringSolid State Communications, 1976
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Investigation of the density of localized states in a-Si using the field effect techniqueJournal of Non-Crystalline Solids, 1976
- Investigation of the localised state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972
- Measurements of the Field Effect in Amorphous Switching MaterialsApplied Physics Letters, 1971
- Theory of the Field Effect in Amorphous Covalent Semiconductor FilmsJournal of Vacuum Science and Technology, 1971