Theory and Experiments on Shot Noise in Silicon P-N Junction Diodes and Transistors
- 1 April 1959
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 47 (4), 546-554
- https://doi.org/10.1109/jrproc.1959.287337
Abstract
Experiments with silicon junction diodes and transistors have shown that previous theoretical expressions for the noise of such elements do not hold for silicon. New theoretical expressions are derived on the basis of recombination-generation in the depletion layer. These new expressions are satisfactorily checked by experiments in the case of low-level current injection. At high-level injection, however, deviations occur, for which no exact theory is known.Keywords
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