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A new insulated-gate silicon transistor
Home
Publications
A new insulated-gate silicon transistor
A new insulated-gate silicon transistor
NT
N.C. Tombs
N.C. Tombs
HW
H.A.R. Wegener
H.A.R. Wegener
RN
R. Newman
R. Newman
BK
B.T. Kenney
B.T. Kenney
AC
A.J. Coppola
A.J. Coppola
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1 January 1966
journal article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
in
Proceedings of the IEEE
Vol. 54
(1)
,
87-88
https://doi.org/10.1109/PROC.1966.4607
Abstract
No abstract available
Keywords
SILICON
CAPACITANCE
DIELECTRICS AND ELECTRICAL INSULATION
IMPURITIES
DOPING
VOLTAGE
DIELECTRIC MATERIALS
SEMICONDUCTOR MATERIALS
DIELECTRIC BREAKDOWN
FABRICATION
Cited by 12 articles