Electrical transport in low-resistivity amorphous metals

Abstract

Diffraction-model calculations incorporating appropriate scattering matrix elements and phonon-ineffectiveness effects (saturation effects) yield results which are consistent with the observed temperature dependence of the electrical resistivity in low-resistivity ($\rho <100\mathrm{}$) μΩ cm amorphous alloys. In particular, remarkably good quantitative agreement with available detailed resistivity measurements in $a-\mathrm{M}\mathrm{g}\mathrm{Z}\mathrm{n}$ alloys has been obtained by these methods. The results further indicate that saturation effects, which dominate the temperature dependence of the high-resistivity amorphous metals, are important even for resistivities as low as $50$ μΩ cm.