Determination of concentrations of donors and acceptors in GaAs by an optical method

Abstract

The concentrations of donors (N_D) and acceptors (N_A) in a high‐quality GaAs epitaxial layer sample are determined by the optical method. The numerical values of N_D and N_A are deduced from the limiting values of combinations of the excitation‐dependent integrated emission intensities due to the conduction‐band–to–neutral‐acceptor, neutral‐donor–to–valence‐band, and neutral‐donor–to–neutral‐acceptor transitions.