ELECTROREFLECTANCE MEASUREMENTS ON GaxIn1−xAs ALLOYS
- 1 August 1967
- journal article
- Published by Canadian Science Publishing in Canadian Journal of Physics
- Vol. 45 (8), 2597-2607
- https://doi.org/10.1139/p67-210
Abstract
The electrorellectance of GaAs, InAs, and the GaxIn1−xAs alloys has been measured between 2 and 6 eV at room temperature. The E1, E0′, and E2 transitions and their associated split-off and oscillatory components have been observed, and their behavior as a function of alloy composition is presented. A more detailed account of the band structure of the compounds and their alloys than was obtained by earlier reflectance results is given.Keywords
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